Wq4830 digital storage transistor characteristic maper
Y-axis systems:
A. Collected electrodes:
Wq4830: 20 μa/div ~ 5a/div, available at 50a, in 17 slots
B. Reverse leakage of diodes: 0. 02 μa/div ~ 1 μa/div, class 6
X-axis systems:
A. Collected polar voltage vce: 10 mv/div ~ 50v/div, up to 500 v, 12 tranches
B. Base polar voltage vbe: 50 mv/div ~ 1v/div, in fifth tranche
C. Diode-reverse resistance vd: 100 v/div ~ 500 v/div, up to 5000 v, in 3 tranches
Elevator current:
Wq4830: 0. 2 μa/level ~0. 5 a/level, in 20 tranches
Elevator voltage: 10 mv/class ~ 1 v/class, class 7
Number of steps: 0 ~ 10, consecutively transferable
Stairwell bias: ±1 steps, continuously adjustable
Scan power source:
A. Ceiling of electrodes scanned voltage (dc/ac):
Wq4830:10v(50a), 50v(10a), 100v(1a), 500v(0. 1a)
B. Diodetic reverse voltage: 5000v (5ma)
Usage: wq4830: but 200w
Outer dimensions: 32 (long) x 21 (wide) x 40 (high) cm
Weight: about 20 kg
