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Selecting a quality document -- and giving you controllable silicon working principles (with a graph) - a controlled silicon is a short word for a controllifier. It is a semiconductor device consisting of three pn four-layer structure silicon chips and three electrodes. Figures 3-29 show its structure, shape and graphic symbols. Three electrodes of controlled silicon are called anodes (a), cathodes (k) and control poles (g). When the anode of the device is charged to a level (relatively to the cathode), the symbol chart shows that the pn knot is in reverse and has a reverse properties similar to those of the diodes. When the anode of the device is attached to a positive level (if the control is extremely low) the device remains, within a given voltage range, highly resistant to closure. However, when the positive voltage is greater than a certain voltage (known as the turning voltage), the device is rapidly converted to a low-obstructive guidance state. When added to the controlled silicon anode and cathode voltage is below the turning voltage, the device is closed. At this point, if the control pole is accompanied by a positive voltage (for the cathode) of the appropriate size, the silicon can be controlled to be rapidly activated and transformed into a conductive state. Controlled silicon loses its control once it is channeled. In other words, the conductive pull-out of the fenced electrovoltaic controlled silicon is still channeled, and only when the current in the device is reduced below a certain value or when the voltage between the cathode and the anode is reduced to zero or negative can the device be restored to a closed state. Figure 3-30 shows the vulcan characterization curve of the controlled silicon. The middle curve i is positive to block. Controlled silicon-directive channeling voltage (ub0); when controlled extremes
