Mos is one of the more fundamental components of the semiconductor material industry, which is widely used in industry, new energy sources, transport, lighting, etc., and the various structures of the mos system are also operating in an irreplaceable way. Being a basic device, which usually combines simplicity and complexity, simplicity depends on its structure and complexity on the underlying considerations of application. Therefore, as a hardware developer, the understanding of the mos tube is an indispensable step in the way of the circuits, so the mos tube needs to be analysed in terms of its structure, characteristics and applications, and this section begins with a description of the mos tube's working principles and the usual type of structure。
Mos tubes, i. E. Insulation field effect tubes in integrated circuits. Mos english, fully called metal-oxygen-semiconductor, describes the structure of the integrated circuit, i. E., the addition of silicon dioxide and metal to the semiconductor parts of a given structure to form a fence. It uses vgs to control the amount of the “sensor charge”, to change the condition of the conductive circuits created by these “sensor charge”, and then to control leaking electrodes。
Mos structure example
There are two structural forms of the mos tube, n-tunnel and p-tunnel, with different structures, and the extremes of the voltage used, and the fact that the mos tube in the p-tunnel usually has greater conductive resistance than the mos tube in the n-tunnel, which means that the operation will be more expensive. This is where the choice needs attention. In general, the use of the n-row mos tube is the preferred, driven and flexible option for low-side switch applications。
Focusing on hardware knowledge, one minute to give you more knowledge of metaware. Next period, we'll keep talking about the characteristics of the mos tube and how to select the mos model。
