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  • Evolution of pressure sensors

       2026-03-14 NetworkingName1140
    Key Point:Pressure sensors are devices or devices capable of absorbing pressure signals and converting pressure signals to usable output telecommunications in accordance with certain patterns. Either product has gone through several processes of growth, growth, maturity, etc., so that the olydian instrument gives you a detailed account of the evolution of the pressure sensors1 innovation phase (1945-1960), marked mainly by the invention of the bipolar tran

    Pressure sensors are devices or devices capable of absorbing pressure signals and converting pressure signals to usable output telecommunications in accordance with certain patterns. Either product has gone through several processes of growth, growth, maturity, etc., so that the olydian instrument gives you a detailed account of the evolution of the pressure sensors

    1 innovation phase (1945-1960), marked mainly by the invention of the bipolar transistor in 1947. This characteristic of semiconductor material has since been applied more widely. Smith (c. S. Smith and 1945) found the pressure effect of silicon and thorium, i. E., that when external forces act on semiconductor materials, their resistance will change significantly. Pressure sensors based on this principle are adhesived to the metallic film, which converts a force signal to a telecommunications signal for measurement. The minimum size of this phase is about 1 cm

    2 phases of technology development (1960-1970): with the development of silicon diffusion technology, technicians in silicon 001 or (110 crystals select suitable crystals to spread resistance directly to the crystal surface and then to the back in a dent to form a thiner silicon elastic film called silicon cup, which has the advantage of small size, light weight, high sensitivity, stability, low cost and easy integration, have achieved metallic-silica coliforms and have made commercialization possible。

    3 commercial integration processing phase (1970-1980): applying the various directional corrosion techniques of silicon, based on the silica proliferation theory, spreading the silica sensors, whose processes are dominated by silica heterogeneic corrosive techniques, and developing into a silica-specific process that automatically controls the thickness of the silica membranes, notably the v cell method, the automatic suspension of entropy, the automatic suspension of the anode oxide method and the automatic suspension of micromachine control. Because of corrosiveness on multiple surfaces, thousands of silicon pressure membranes can be produced at the same time and integrated plant processing patterns are achieved, with further cost reductions。

    4 micromechanical processing phase (1980-present): nanotechnology, which emerged at the end of the last century, made micromechanical processing possible。

    Structured pressure sensors can be processed by computer control through micromechanical processes, and their rays can be controlled within the micro-scale. This technology can be used to process, cortex, strips, membranes, and bring pressure sensors into the micrometer phase。

    The principle of wireless pressure sensors

     
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